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Journal of Engineering and Applied Science

Table 1 Morse potential parameters D, α and the related parameter r0 of Si, Ge, and SiGe in comparison to some experimental results [10, 14]

From: High-pressure study of thermodynamic parameters of diamond-type structured crystals using interatomic Morse potentials

Crystal

β

α (Å−1)

D (eV)

r0(Å)

Si (present)

120.110

1.3642

0.9862

2.8429

Si (expt.)

–

1.3106

–

2.7503

Ge (present)

327.210

1.5569

0.9675

2.8319

Ge (expt.)

–

1.4105

–

2.7442

SiGe (present)

–

1.4606

0.9769

2.7934

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